The Difference between bjt and fet
|1:BJT (bipolar junction transistor ) is the bipolar device.||1:FET (field effect transistor) is a uni junction transistor.|
|2:Its operation depends on both majority charge carriers and minority charge carriers.||2:Its operation depends on majority charge carriers which may be holes or electrons.|
|3:Input impedance of bjt is very less i.e (1k -3k)||3:Input impedance of FET is very large.|
|4:It is the current control device.||4:It is the voltage controlled device.|
|5:It is more noisy.||5:It is less noisy.|
|6:Its frequency variations effect its performance.||6:It has high frequency response.|
|7:It is temperature dependent device.||7:It has better heat stability.|
|8:It is cheaper.||8:It is costly than bjt.|
|9:It is bigger in size than FET.||9:It is smaller in size than BJT.|
|10:It has an offset voltage.||10:It has no offset voltage.|
|11:It has more gain.||11:It has less gain.|
|12:It has high output impedance because of high gain.||12:It has low output impedance because of less gain.|
|13:Its collector and base are more positive than emitter.||13:Its Drain is positive,gate is negative w.r.t to source.|
|14:Its base is negative w.r.t to emitter.||14:Its gate is more negative w.r.t to source.|
|15:Bjt has three parts ( base ,Emitter and Collector).||15:Fet has three parts (Drain,Source and Gate).|
|16:It has high voltage gain.||16:It has low voltage gain.|
|17:It has low current gain.||17:It has high current gain.|
|18:Its switching time is medium.||18:Its switching time is fast.|
|19:It is easily biased.||19:Its biasing is difficult.|
|20:These are preferred for low current applications.||20:These are preferred for low voltage applications.|
|21:It requires small amount of current to keep on.||21:They requires small amount of voltage to keep on.|
22:It consumes more power.
23:It has negative temperature co efficient.
22:It consumes less power.
23 :It has positive temperature co efficient.